Characterization of Electro-Thermal Effects in GaN Based HEMTs

Mattias Thorsell; Kristoffer Andersson; Hans Hjelmgren; Niklas Rorsman

Characterization of Electro-Thermal Effects in GaN Based HEMTs
Conference poster, 2010

This paper presents a new method for characterizing electro-thermal effects in GaN based HEMTs. The proposed method characterizes the thermal and bias dependence of the current through the 2-DEG individually. The temperature dependence is characterized by TLM measurements versus ambient temperature, showing an increasing sheet resistivity with temperature. The thermal impedance is determined from low frequency impedance measurements, indicating thermal response up to at least 100 MHz. The isothermal bias dependence is measured above the thermal cut-off with a LSNA, showing a nonlinear current versus voltage characteristic.

Author

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Other publications Research

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Other publications Research

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

5th Space Agency - MOD Round Table Workshop on GaN Component Technologies

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

More information

Created

10/8/2017

Characterization of Electro-Thermal Effects in GaN Based HEMTs Conference poster, 2010

Author

Mattias Thorsell

Kristoffer Andersson

Hans Hjelmgren

Niklas Rorsman

5th Space Agency - MOD Round Table Workshop on GaN Component Technologies

Subject Categories

More information

Created

Characterization of Electro-Thermal Effects in GaN Based HEMTs
Conference poster, 2010