Characterization of Electro-Thermal Effects in GaN Based HEMTs
Poster (konferens), 2010
This paper presents a new method for characterizing electro-thermal effects in GaN based HEMTs. The proposed method characterizes the thermal and bias dependence of the current through the 2-DEG individually. The temperature dependence is characterized by TLM measurements versus ambient temperature, showing an increasing sheet resistivity with temperature. The thermal impedance is determined from low frequency impedance measurements, indicating thermal response up to at least 100 MHz. The isothermal bias dependence is measured above the thermal cut-off with a LSNA, showing a nonlinear current versus voltage characteristic.
Författare
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Kristoffer Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Hans Hjelmgren
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Ämneskategorier
Annan elektroteknik och elektronik
Den kondenserade materiens fysik