Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Journal article, 2020

This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced electron trapping effects, the thermal characterization has to be performed under specific conditions. The electric field is limited to low levels to avoid activation of trap states. At the same time, the dissipated power needs to be high enough to change the operating temperature of the device. The method is demonstrated on a test structure implemented as a GaN resistor with large contact separation. It is used to evaluate the thermal properties of samples with different silicon carbide suppliers and buffer thickness.

measurement

electrothermal effects

thermal resistance

gallium nitride (GaN)

Characterization

Author

Johan Bremer

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Chen Ding Yuan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Aleksandra Malko

United Monolithic Semiconductors (UMS)

Manfred Madel

United Monolithic Semiconductors (UMS)

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2)

Kristoffer Andersson

Ericsson

Torbjörn Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Peter E. Raad

Southern Methodist University

Pavel L. Komarov

TMX Scientific

Travis L. Sandy

TMX Scientific

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 67 5 1952-1958

Subject Categories

Other Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TED.2020.2983277

More information

Latest update

9/18/2020