Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Journal article, 2020
measurement
electrothermal effects
thermal resistance
gallium nitride (GaN)
Characterization
Author
Johan Bremer
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chen Ding Yuan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Aleksandra Malko
United Monolithic Semiconductors (UMS)
Manfred Madel
United Monolithic Semiconductors (UMS)
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2)
Kristoffer Andersson
Ericsson
Torbjörn Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems
Peter E. Raad
Southern Methodist University
Pavel L. Komarov
TMX Scientific
Travis L. Sandy
TMX Scientific
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 67 5 1952-1958 9063497Subject Categories
Other Materials Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/TED.2020.2983277