Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Artikel i vetenskaplig tidskrift, 2020

This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced electron trapping effects, the thermal characterization has to be performed under specific conditions. The electric field is limited to low levels to avoid activation of trap states. At the same time, the dissipated power needs to be high enough to change the operating temperature of the device. The method is demonstrated on a test structure implemented as a GaN resistor with large contact separation. It is used to evaluate the thermal properties of samples with different silicon carbide suppliers and buffer thickness.


electrothermal effects

thermal resistance

gallium nitride (GaN)



Johan Bremer

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Chen Ding Yuan

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Aleksandra Malko

United Monolithic Semiconductors (UMS)

Manfred Madel

United Monolithic Semiconductors (UMS)

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Sten Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap

Kristoffer Andersson

Ericsson AB

Torbjörn Nilsson

Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial

Peter E. Raad

Southern Methodist University

Pavel L. Komarov

TMX Scientific

Travis L. Sandy

TMX Scientific

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN) 15579646 (eISSN)

Vol. 67 5 1952-1958 9063497


Annan materialteknik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik



Mer information

Senast uppdaterat