Ding-Yuan Chen

Advancing GaN HEMT Technology for Microwave Applications: Investigations of Ohmic Contacts, Passivation, and Buffer-Free Concepts

Semiconductor device structure with recessed ohmic contacts and method for producing the same

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE^® Structure

Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

2020

Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes