Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Artikel i vetenskaplig tidskrift, 2022
The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
LPCVD
traps
GaN HEMTs
microwave
NH3 pretreatment
Författare
Chen Ding Yuan
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Axel R. Persson
Linköpings universitet
Kai-Hsin Wen
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Daniel Sommer
United Monolithic Semiconductors (UMS)
Jan Grunenputt
United Monolithic Semiconductors (UMS)
Herve Blanck
United Monolithic Semiconductors (UMS)
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Olof Kordina
SweGaN AB
Vanya Darakchieva
Linköpings universitet
Lunds universitet
Per O. A. Persson
Linköpings universitet
Jr-Tai Chen
SweGaN AB
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 37 3 035011Ämneskategorier
Medicinsk apparatteknik
Materialkemi
Den kondenserade materiens fysik
DOI
10.1088/1361-6641/ac4b17