Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Licentiatavhandling, 2020

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QuanFINE

passivation

GaN HEMT

pretreatment

ohmic contact

Författare

Chen Ding Yuan

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

SweGaN AB

Inkluderade delarbeten

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Semiconductor Science and Technology,;Vol. 33(2018)

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Impact of GaN HEMTs Performance by In-situ NH3 Pretreatment before LPCVD SiNx Passivation

Manuskript

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IEEE Electron Device Letters,;Vol. 41(2020)p. 828-831

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Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

IEEE Transactions on Electron Devices,;Vol. 67(2020)p. 1952-1958

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Kategorisering

Ämneskategorier (SSIF 2011)

Telekommunikation

Nanoteknik

Infrastruktur

Myfab (inkl. Nanotekniklaboratoriet)

Övrigt

Serie

Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 435

Utgivare

Chalmers

Mer information

Senast uppdaterat

2020-12-21