Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE® Structure
Paper i proceeding, 2021

The performance of HEMTs fabricated on a thin Al0.5Ga0.5N/GaN heterostructure with a total barrier thickness of 6.5 nm is presented and benchmarked to the epi-structure with a 13 nm thick Al0.3Ga0.7N barrier on an identical QuanFINE® structure. DC transfer characteristics on both samples with a gate length of 100 nm demonstrate a high current above 1 A/mm. A higher extrinsic gm of 550 mS/mm is measured on the sample with a thinner high Al content barrier. Moreover, low trapping effects with a 12-14 % buffer-related dispersion at a VDSQ of 25 V are characterized for both samples, which indicate the advantage of the iron-free QuanFINE® heterostructure.

AlGaN

GaN

Short channel effect

QuanFINE ®

HEMTs

RF

Författare

Chen Ding Yuan

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik, Mikrovågselektronik

SweGaN AB

Kai-Hsin Wen

SweGaN AB

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

O. Kordina

SweGaN AB

J. T. Chen

SweGaN AB

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

153-155
9781893580312 (ISBN)

35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Orlando, Virtual, USA,

Ämneskategorier

Oorganisk kemi

Materialkemi

Den kondenserade materiens fysik

Mer information

Senast uppdaterat

2022-02-22