Ding-Yuan Chen

Doctoral Student at Microwave Electronics

I work as an industrial Ph.D. student with SweGaN AB and Chalmers University of Technology. I focus my research on GaN HEMTs for high frequency and high power applications. The goal is to improve the device performance from material and device processing, which can improve the performance of 5G base station, sensing technology, and EV charging system. I also work as GaN device engineer in SweGaN AB.

Source: chalmers.se
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Showing 8 publications

2023

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Ding-Yuan Chen, Axel R. Persson, Vanya Darakchieva et al
Semiconductor Science and Technology. Vol. 38 (10)
Journal article
2022

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Chen Ding Yuan, Axel R. Persson, Kai-Hsin Wen et al
Semiconductor Science and Technology. Vol. 37 (3)
Journal article
2021

Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE<sup>®</sup> Structure

Chen Ding Yuan, Kai-Hsin Wen, Mattias Thorsell et al
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, p. 153-155
Paper in proceeding
2020

Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Johan Bremer, Chen Ding Yuan, Aleksandra Malko et al
IEEE Transactions on Electron Devices. Vol. 67 (5), p. 1952-1958
Journal article
2018

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Yen Ku Lin, Johan Bergsten, Hector Leong et al
Semiconductor Science and Technology. Vol. 33
Journal article
2018

Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes

Yohan Désières, Chen Ding Yuan, Dennis Visser et al
Applied Physics Letters. Vol. 112 (23)
Journal article
2013

Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes

Te-Chih Hsiung, Chen Ding Yuan, Li Zhao et al
Applied Physics Letters. Vol. 103 (16)
Journal article

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