Ding-Yuan Chen
I work as an industrial Ph.D. student with SweGaN AB and Chalmers University of Technology. I focus my research on GaN HEMTs for high frequency and high power applications. The goal is to improve the device performance from material and device processing, which can improve the performance of 5G base station, sensing technology, and EV charging system. I also work as GaN device engineer in SweGaN AB.
Showing 8 publications
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Thin Al
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
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