Ding-Yuan Chen
Showing 15 publications
Semiconductor device structure with recessed ohmic contacts and method for producing the same
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE<sup>®</sup> Structure
Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
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