Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Paper in proceedings, 2018

This paper shows how the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) can be derived from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point. The parameters dependency of the biasing of the amplifier are also incorporated which enables the possibility to study how SNDR can be optimized for different operating conditions by dynamically change the gate- and drain voltage. An experimental verification shows that improvements in SNDR can be achieved by selecting gate- and drain voltage of the LNA according to the level of the input signal power.

low-noise amplifiers

signal-To-noise ratio

nonlinear distortion

dynamic bias

thermal noise

Author

Lowisa Hanning

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Johan Bremer

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Marie Strom

Niklas Billström

Thomas Eriksson

Chalmers, Electrical Engineering, Communication and Antenna Systems, Communication Systems

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

GigaHertz Centre

Vol. 1 1-4

ARFTG Microwave Measurement Conference
Philadelphia, USA,

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Subject Categories

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ARFTG.2018.8423836

More information

Latest update

3/13/2019