Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Paper in proceeding, 2018
This paper shows how the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) can be derived from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point. The parameters dependency of the biasing of the amplifier are also incorporated which enables the possibility to study how SNDR can be optimized for different operating conditions by dynamically change the gate- and drain voltage. An experimental verification shows that improvements in SNDR can be achieved by selecting gate- and drain voltage of the LNA according to the level of the input signal power.
thermal noise
low-noise amplifiers
dynamic bias
signal-To-noise ratio
nonlinear distortion
Author
Lowisa Hanning
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Johan Bremer
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Marie Strom
Saab
Niklas Billström
Saab
Thomas Eriksson
Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018
Vol. 1 8423836
9781538654491 (ISBN)
ARFTG Microwave Measurement Conference
Philadelphia, USA,
Philadelphia, USA,
Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Subject Categories
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ARFTG.2018.8423836