Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Paper i proceeding, 2018
This paper shows how the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) can be derived from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point. The parameters dependency of the biasing of the amplifier are also incorporated which enables the possibility to study how SNDR can be optimized for different operating conditions by dynamically change the gate- and drain voltage. An experimental verification shows that improvements in SNDR can be achieved by selecting gate- and drain voltage of the LNA according to the level of the input signal power.
thermal noise
low-noise amplifiers
dynamic bias
signal-To-noise ratio
nonlinear distortion
Författare
Lowisa Hanning
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Johan Bremer
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Marie Strom
Saab
Niklas Billström
Saab
Thomas Eriksson
Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018
Vol. 1 8423836
9781538654491 (ISBN)
ARFTG Microwave Measurement Conference
Philadelphia, USA,
Philadelphia, USA,
Styrkeområden
Informations- och kommunikationsteknik
Infrastruktur
Kollberglaboratoriet
Ämneskategorier
Signalbehandling
Annan elektroteknik och elektronik
DOI
10.1109/ARFTG.2018.8423836