Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Paper i proceeding, 2018

This paper shows how the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) can be derived from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point. The parameters dependency of the biasing of the amplifier are also incorporated which enables the possibility to study how SNDR can be optimized for different operating conditions by dynamically change the gate- and drain voltage. An experimental verification shows that improvements in SNDR can be achieved by selecting gate- and drain voltage of the LNA according to the level of the input signal power.

thermal noise

low-noise amplifiers

nonlinear distortion

signal-To-noise ratio

dynamic bias

Författare

Lowisa Hanning

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Johan Bremer

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Marie Strom

Niklas Billström

Thomas Eriksson

Chalmers, Elektroteknik, Kommunikationssystem, informationsteori och antenner, Kommunikationssystem

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Vol. 1 1-4

ARFTG Microwave Measurement Conference
Philadelphia, USA,

Styrkeområden

Informations- och kommunikationsteknik

Infrastruktur

Kollberglaboratoriet

Ämneskategorier

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1109/ARFTG.2018.8423836

Mer information

Senast uppdaterat

2019-01-16