On the Large Signal Evaluation and Modeling of GaN FET
Journal article, 2010
The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
resistance
mesfet model
frequency-dependence
small signal and large signal models
FET
equivalent-circuit
hfets
GaN
Author
Iltcho Angelov
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. Inoue
Y. Koji
H. Noto
IEICE Transactions on Electronics
0916-8524 (ISSN)
Vol. E93C 8 1225-1233Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1587/transele.E93.C.1225