On the Large Signal Evaluation and Modeling of GaN FET
Artikel i vetenskaplig tidskrift, 2010

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

resistance

mesfet model

frequency-dependence

small signal and large signal models

FET

equivalent-circuit

hfets

GaN

Författare

Iltcho Angelov

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Kristoffer Andersson

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Inoue

Y. Koji

H. Noto

IEICE Transactions on Electronics

0916-8524 (ISSN)

Vol. E93C 8 1225-1233

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1587/transele.E93.C.1225

Mer information

Skapat

2017-10-07