A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates
Paper i proceeding, 2013

The aim of this study is to compare DC characteristics of 'as-grown' and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [5]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behavior and uniformity issues with respect to both materials are reported. The as-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epigraphenes.

DC analysis

uniformity

graphene fabrication

Epi-graphene of SiC

comparison study

memory effects

H-Intercalation

Författare

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. ul Hassan

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

E. Janzen

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN)

Vol. 740-742 129-132

Ämneskategorier

Materialteknik

DOI

10.4028/www.scientific.net/MSF.740-742.129

Mer information

Skapat

2017-10-07