Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Paper i proceeding, 2014

An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN passivation is reported. The ohmic contacts were annealed at 550 degrees C, resulting in a contact resistance of 0.64 Omm. The gate length was 50 nm. The device performance and the process were evaluated by performing DC-, pulsed IV-, RF-, and load-pull measurements. It was observed that current slump was effectively mitigated by the passivation layer. The DC channel current density increased by 71 % to 1170 mA/mm at the knee of the IV curve, and the transconductance increased from 382 to 477 mS/mm after passivation. At the same time the gate leakage increased, and the extrinsic f(max) decreased from 207 to 140 GHz. Output powers of 4.1 and 3.5 W/mm were measured after passivation at 31 and 40 GHz, respectively.

HEMT

passivation

ohmic contact

InAlN

Ta

Författare

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

P. Gamarra

Thales Research and Technology

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. A. di Forte-Poisson

Thales Research and Technology

C. Lacam

Thales Research and Technology

M. Tordjman

Thales Research and Technology

R. Aubry

Thales Research and Technology

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 11 3-4 924-927

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1002/pssc.201300320

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Senast uppdaterat

2018-09-06