Anna Malmros

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

2019

Advanced III-Nitride Technology for mm-Wave Applications

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Combined TiN- and TaN temperature compensated thin film resistors

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

TiN thin film resistors for monolithic microwave integrated circuits

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

GaN Device and MMIC development at Chalmers

Cryogenic X-Band Low Noise Amplifiers

A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

Noise optimization of InP HEMTs

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Crygenically Cooled 8.4-8.5 GHz Low Noise Amplifiers

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance