Anna Malmros

Forskningsingenjör vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Visar 24 publikationer

2019

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Anna Malmros, J. T. Chen, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 66 (7), p. 2910-2915
Artikel i vetenskaplig tidskrift
2018

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Yen-Ku Lin, Johan Bergsten, Hector Leong et al
Semiconductor Science and Technology. Vol. 33 (9)
Artikel i vetenskaplig tidskrift
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Artikel i vetenskaplig tidskrift
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Artikel i vetenskaplig tidskrift
2015

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi Ngoc Do Thanh, Anna Malmros, P. Gamarra et al
IEEE Electron Device Letters. Vol. 36 (4), p. 315-317
Artikel i vetenskaplig tidskrift
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper i proceeding
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Johan Bergsten, Anna Malmros, M. Tordjman et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Artikel i vetenskaplig tidskrift
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Artikel i vetenskaplig tidskrift
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper i proceeding
2012

Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros, Kristoffer Andersson, Niklas Rorsman
Thin Solid Films. Vol. 520 (6), p. 2162-2165
Artikel i vetenskaplig tidskrift
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Artikel i vetenskaplig tidskrift
2011

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Anna Malmros, H. Blanck, Niklas Rorsman
Semiconductor Science and Technology. Vol. 26 (7)
Artikel i vetenskaplig tidskrift
2010

TiN thin film resistors for monolithic microwave integrated circuits

Anna Malmros, Mattias Sudow, Kristoffer Andersson et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 28 (5), p. 912-915
Artikel i vetenskaplig tidskrift
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper i proceeding
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper i proceeding
2007

Cryogenic X-Band Low Noise Amplifiers

Naiara Goia, Matthew Kelly, Anna Malmros et al
4th ESA International Workshop on Tracking, Telemetry & Command Systems for Space Applications
Paper i proceeding
2006

Noise optimization of InP HEMTs

Mikael Malmkvist, Anna Malmros, Niklas Wadefalk et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. 97-99
Paper i proceeding
2006

A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

Anna Malmros, Niklas Wadefalk, Piotr Starski et al
Asia Pacific Microwave Conference
Paper i proceeding
2005

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Anna Malmros, Piotr Starski, Jan Grahn
Proceed. GigaHertz 2005 conference, p. 266-269
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Crygenically Cooled 8.4-8.5 GHz Low Noise Amplifiers

Naiara Goia, Matthew Kelly, Anna Malmros et al
Gigahertz 2005
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Jan Grahn, Piotr Starski, Mikael Malmkvist et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128
Paper i proceeding

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Visar 1 forskningsprojekt

2014–2018

Bridging the THz-gap

Herbert Zirath Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
Tommy Ive Fotonik
Anna Malmros Mikrovågselektronik
Knut och Alice Wallenbergs Stiftelse

Det kan finnas fler projekt där Anna Malmros medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.