Anna Malmros

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

2019

Advanced III-Nitride Technology for mm-Wave Applications

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Combined TiN- and TaN temperature compensated thin film resistors

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

TiN thin film resistors for monolithic microwave integrated circuits

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

GaN Device and MMIC development at Chalmers

Cryogenic X-Band Low Noise Amplifiers

Noise optimization of InP HEMTs

A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Crygenically Cooled 8.4-8.5 GHz Low Noise Amplifiers

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance