TiN thin film resistors for monolithic microwave integrated circuits
Artikel i vetenskaplig tidskrift, 2010

Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (rho) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 angstrom, corresponding to a sheet resistance (R-s) of 10 Omega/square, were successfully deposited without any signs of stress in the films. The critical dissipated power (P-c) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements.

thin film

monolithic integrated circuits

mmic process

electrical resistivity

resistors

titanium compounds

Författare

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Sudow

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

2166-2754 (ISSN)

Vol. 28 5 912-915

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.1116/1.3475532