TiN thin film resistors for monolithic microwave integrated circuits
Journal article, 2010

Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (rho) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 angstrom, corresponding to a sheet resistance (R-s) of 10 Omega/square, were successfully deposited without any signs of stress in the films. The critical dissipated power (P-c) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements.

thin film

monolithic integrated circuits

mmic process

electrical resistivity

resistors

titanium compounds

Author

Anna Malmros

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

2166-2754 (ISSN)

Vol. 28 5 912-915

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1116/1.3475532

More information

Created

10/7/2017