Cryogenic X-Band Low Noise Amplifiers
Paper i proceeding, 2007

This paper describes a number of cryogenic low noise amplifiers with very low noise for the frequency band 8.4-8.5 GHz. The amplifiers have been designed with different inputs: o standard coaxial o waveguide o coaxial followed by a high directivity 30 dB microstrip coupler At 10 K ambient temperature the three-stage partly InP-based amplifiers have a gain of 33.0+/-0.5 dB and a noise temperature of 5 -7K. The InP transistors used in the amplifiers were processed at Chalmers clean room facility in our own proprietary process.

HEMT

noise temperature

cryogenic low noise amplifier

LNA

InP

Författare

Naiara Goia

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Matthew Kelly

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Piotr Starski

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

4th ESA International Workshop on Tracking, Telemetry & Command Systems for Space Applications

Ämneskategorier

Annan elektroteknik och elektronik