Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
Artikel i vetenskaplig tidskrift, 2015

The formation of recess etched Au-free ohmic contacts to an InAlN/AlN/GaN heterostructure is investigated. A Ta/Al/Ta metal stack is used to produce contacts with contact resistance (R-c) as low as 0.14 Omega mm. It is found that R-c decreases with increasing recess depth until the InAlN barrier is completely removed. For even deeper recesses R-c remains low but requires annealing at higher temperatures for contact formation. The lowest R-c is found for contacts where the recess etch has stopped just above the 2D electron gas channel. At this depth the contacts are also found to be less sensitive to other process parameters, such as anneal duration and temperature. An optimum bottom Ta layer thickness of 5-10 nm is found. Two reliability experiments preliminary confirm the stability of the recessed contacts.

InAlN

Au-free

ohmic contact

GaN

high electron mobility transistor

recess etch

Författare

Johan Bergsten

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. Tordjman

Thales Research and Technology

P. Gamarra

Thales Research and Technology

C. Lacam

Thales Research and Technology

M. A. di Forte-Poisson

Thales Research and Technology

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 30 10 105034-

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1088/0268-1242/30/10/105034

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Senast uppdaterat

2018-09-06