Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
Journal article, 2015
ohmic contact
recess etch
GaN
high electron mobility transistor
InAlN
Au-free
Author
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
M. Tordjman
Thales Group
P. Gamarra
Thales Group
C. Lacam
Thales Group
M. A. di Forte-Poisson
Thales Group
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 10 105034- 105034Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1088/0268-1242/30/10/105034