Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
Paper i proceeding, 2015

A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (<6%). These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have highest output power (2.9 W/mm at 3 GHz).

Trapping

current collapse

AlGaN/GaN high-electron-mobility transistors

passivation

Författare

Tongde Huang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Olle Axelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Johan Bergsten

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Sebastian Gustafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3

7413558

Ämneskategorier

Telekommunikation

DOI

10.1109/APMC.2015.7413558

ISBN

978-1-4799-8767-2

Mer information

Skapat

2017-10-07