Tongde Huang

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition