Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition
Artikel i vetenskaplig tidskrift, 2015

A bilayer SiNx passivation scheme has been developed using low pressure chemical vapor deposition (LPCVD), which effectively suppresses the dispersive effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) for microwave power operation. The bilayer LPCVD passivation is compared with in-situ SiNx passivations by metal-organic chemical vapor deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced chemical vapor deposition (PECVD). The HEMTs were fabricated and characterized in terms of pulsed IV, transient drain current, and load pull. The devices passivated with in-situ MOCVD SiNx or PECVD SiNx exhibit significant current slump (similar to 40%) and knee-voltage walkout, while the bilayer LPCVD SiNx passivated device shows negligible current slump (similar to 6%) and knee-voltage walkout. These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have the lowest dynamic ON-state resistance and highest output power (5.4 W/mm at 3 GHz).

trapping

AlGaN/GaN high-electron-mobility transistors

passivation

current collapse

Författare

Tongde Huang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anna Malmros

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Johan Bergsten

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Sebastian Gustafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Olle Axelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 36 537-539

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/led.2015.2427294