Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
Artikel i vetenskaplig tidskrift, 2016

This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in the buffer, but also the recovery process, which is important in the analysis of suitable linearization schemes for amplitude modulated signals. It is shown that the simple pulsed dc measurements of current transients can be used to investigate transient effects in the RF power. Specifically, it is revealed that the design of the Fe-doping profile in the buffer greatly influences the recovery time, with the samples with lower Fe concentration showing slower recovery. In contrast, traditional indicators, such as S-parameters and dc as well as pulsed $I$-$V$ characteristics, show very small differences. An analysis of the recovery shows that this effect is due to the presence of two different detrapping processes with the same activation energy (0.6 eV) but different time constants. For highly doped buffers, the faster process dominates, whereas the slower process is enhanced for less doped buffers.

semiconductor device doping

Dispersion

trap levels

gallium nitride (GaN)

high electron mobility transistors (HEMTs)

Författare

Olle Axelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Sebastian Gustafsson

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Hans Hjelmgren

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Hervé Blanck

Jörg Splettstoesser

Jim Thorpe

Thomas Roedle

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 63 1 326-332

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TED.2015.2499313

Mer information

Skapat

2017-10-08