High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure
Artikel i vetenskaplig tidskrift, 2022

The performance of a novel ‘buffer-free’ Al-GaN/GaN-on-SiC MISHEMTs for power switching applications is demonstrated in this letter. High voltage operation with exceptionally low gate and drain leakage currents is shown. A specific on-resistance of 3.61 mΩ∙cm2 and an abrupt breakdown voltage of 1622 V at a drain current of 22 nA/mm is achieved. Using two-terminal breakdown measurements, nitrogen-implanted GaN display breakdown fields of 0.96 MV/cm. The semi-insulating SiC substrate is capable of suppressing vertical leakage currents, ensuring that off-state operation is limited by lateral breakdown. The impact of electron trapping effects on dynamic on-resistance is small up to a drain quiescent voltage of at least 240 V. Drain current transient characteristics display a 14% increase in dynamic on-resistance with respect to quiescent drain bias, and a negligible change in resistance up to 100 ms. These types of ‘buffer-free’ heterostructures are of interest for power electronic applications above 1000 V and with potential for co-integration of power and RF-electronics.

normally-on

HEMTs

MISHEMT

high power

‘buffer-free’

power switch

MODFETs

Substrates

Silicon carbide

Leakage currents

AlGaN/GaN

GaN-on-SiC

Electric breakdown

Logic gates

Författare

Björn Hult

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

J. T. Chen

SweGaN AB

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 43 5 781-784

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/LED.2022.3163885

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Senast uppdaterat

2024-03-07