Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
Paper i proceeding, 2013

This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.

large-signal models

microvawe transitors

nonlinear measurements

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

G. Avolio

D. Schreurs

A. Raffo

G. Vannini

43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013

267-270

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

ISBN

978-287487031-6

Mer information

Skapat

2017-10-07