Electrothermal Access Resistance Model for GaN-Based HEMTs
Artikel i vetenskaplig tidskrift, 2011

The high-power density in GaN-based high-electron-mobility transistors (HEMTs) increases demands on the accurate extraction and modeling of electrothermal effects such as self-heating. This paper presents a new electrothermal model of the access resistances in GaN HEMTs, taking into account both self heating and bias dependence. A coplanar ungated transfer length method (TLM) structure has been used to extract the resistance versus temperature, bias, and RF power. The temperature dependence is extracted from dc measurements at ambient temperatures between 293 and 443 K. Small-signal measurements are used to extract the time constants in the thermal impedance. The bias dependence of the current is characterized by isothermal large-signal RF measurements between 1 and 6 GHz. A new method for extracting the thermal resistance from the large-signal measurements together with temperature-dependent dc measurements is also presented.

Författare

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Hans Hjelmgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 58 2 466 - 472

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TED.2010.2093012

Mer information

Skapat

2017-10-07