Symmetrical Large-Signal Modeling of Microwave Switch FETs
Artikel i vetenskaplig tidskrift, 2014

This paper presents a new symmetrical field-effect transistor (FET) model suitable for microwave switches. The model takes advantage of the inherent symmetry of typical switch devices, justifying a new small-signal model where all intrinsic model parameters can be mirrored between the positive and negative drain-source bias regions. This small-signal model is utilized in a new and simplified approach to large-signal modeling of these type of devices. It is shown that the proposed large-signal model only needs a single charge expression to model all intrinsic capacitances. For validation of the proposed model, small-signal measurements from 100 MHz to 50 GHz and large-signal measurements at 600 MHz and 16 GHz, are carried out on a GaAs pHEMT. Good agreement between the model and the measurements is observed under both small-and large-signal conditions with particularly accurate prediction of higher harmonic content. The reduced measurement requirements and complexity of the symmetrical model demonstrates its advantages. Further, supporting operation in the negative drain-source voltage region, the model is robust and applicable to a variety of circuits, e. g., switches, resistive mixers, oscillators, etc.


semiconductor device modeling

Field-effect transistors (FETs)

small-signal model

symmetrical model


large-signal model


microwave switch


Ankur Prasad

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik


Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik


Christer Andersson

Mitsubishi Electric Corporation

Klas Yhland


Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN) 15579670 (eISSN)

Vol. 62 8 1590-1598 6856237


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