Carbon-doped GaN on SiC materials for low-memory-effect devices
Paper i proceeding, 2016

AlGaN/GaN on SiC HEMT structures suitable for high power, high frequency applications are demonstrated. The material manifests record breaking thermal management and electron mobility. Moreover, thanks to the fact that the buffer layer is doped with carbon, the memory effect of processed devices is very low making system design and manufacturing significantly easier and less expensive.

Författare

J. T. Chen

SweGaN AB

Erik Janzén

Linköpings universitet

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Michael Andersson

SweGaN AB

O. Kordina

SweGaN AB

ECS Transactions

1938-5862 (ISSN) 1938-6737 (eISSN)

Vol. 75 12 61-65

Ämneskategorier

Nanoteknik

DOI

10.1149/07512.0061ecst

ISBN

978-160768539-5