A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper in proceeding, 2015
A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
Stacked
PA
GaAs
MMIC
V-band
FET
Power Amplifier
HEMT
mm-wave
Author
Marcus Gavell
Gotmic AB
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ferndahl
Gotmic AB
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2015 IEEE MTT-S International Microwave Symposium, IMS 2015
7166754
978-1-4799-8275-2 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2015.7166754
ISBN
978-1-4799-8275-2