A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper i proceeding, 2015
A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
Stacked
PA
GaAs
MMIC
V-band
FET
Power Amplifier
HEMT
mm-wave
Författare
Marcus Gavell
Gotmic AB
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Mattias Ferndahl
Gotmic AB
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
2015 IEEE MTT-S International Microwave Symposium, IMS 2015
7166754
978-1-4799-8275-2 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/MWSYM.2015.7166754
ISBN
978-1-4799-8275-2