A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper i proceeding, 2015

A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

Stacked

PA

GaAs

MMIC

V-band

FET

Power Amplifier

HEMT

mm-wave

Författare

Marcus Gavell

Gotmic AB

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Gotmic AB

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 IEEE MTT-S International Microwave Symposium, IMS 2015

7166754

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2015.7166754

ISBN

978-1-4799-8275-2

Mer information

Senast uppdaterat

2018-02-28