A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper i proceeding, 2015

A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

mm-wave

FET

MMIC

PA

Power Amplifier

V-band

Stacked

GaAs

HEMT

Författare

Marcus Gavell

Gotmic AB

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Gotmic AB

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 IEEE MTT-S International Microwave Symposium, IMS 2015

7166754

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2015.7166754

ISBN

978-1-4799-8275-2