Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation
Journal article, 2012
Energy efficiency
varactors
gallium nitride (GaN)
silicon–carbide (SiC)
power amplifiers
Author
Christer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
David Gustafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Koji Yamanaka
Mitsubishi Electric Corporation
Eigo Kuwata
Mitsubishi Electric Corporation
Hiroshi Otsuka
Mitsubishi Electric Corporation
Masatoshi Nakayama
Mitsubishi Electric Corporation
Yoshihito Hirano
Mitsubishi Electric Corporation
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 60 12 3778-3786 6338311Areas of Advance
Information and Communication Technology
Driving Forces
Sustainable development
Subject Categories
Telecommunications
Communication Systems
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/TMTT.2012.2221140