Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit
Journal article, 2014

This letter presents guidelines for the design of low phase noise oscillators in GaN high electron mobility transistor (HEMT) technology. The design starts from bias-dependent low-frequency (LF) noise measurements. Oscillator topology and bias point are then chosen for operation in regions where LF noise is low. The best LF noise properties are obtained for low drain voltage and current. Thus, the low phase noise can be achieved at low dc power which also means that power normalized phase noise figure of merit (FOM) will be good.

low frequency noise

oscillator

MMIC

GaN HEMT

phase noise

negative resistance

Author

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

MUSTAFA ÖZEN

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mikael Hörberg

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 24 6 412-414

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LMWC.2014.2313585

More information

Created

10/7/2017