A V-Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1-mu m InGaAs Technology
Journal article, 2016
V-band
GaAs
stability analysis
millimeter wave (mm-wave)
stacked
FET
high-electron mobility transistor (HEMT)
MMIC
power amplifier (PA)
Author
Marcus Gavell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ferndahl
Gotmic AB
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 64 12 4232-4240 7600400Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/tmtt.2016.2613849