A V-Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1-mu m InGaAs Technology
Artikel i vetenskaplig tidskrift, 2016

A stacked high-electron mobility transistor (HEMT) power amplifier (PA) has been designed and implemented in a commercial 0.1-mu m InGaAs pHEMT process to increase gain and output power at millimeter-wave frequencies. The stability problem of the stacked HEMT has been analyzed. A new layout of the stacked HEMT for improving the high frequency stability is proposed and used in the PA design. Measurements on the three-stage PA with parallel devices verify the saturated output power of 25 dBm and the maximum power added efficiency of 15% at 61 GHz, which is the highest reported output power of stacked HEMT PAs. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

V-band

GaAs

stability analysis

millimeter wave (mm-wave)

stacked

FET

high-electron mobility transistor (HEMT)

MMIC

power amplifier (PA)

Författare

Marcus Gavell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Gotmic AB

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 64 12 4232-4240

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2016.2613849

Mer information

Senast uppdaterat

2018-02-28