A Fully Integrated $W$ -Band Signal Source in 60/100-nm Si/AlGaN/GaN HEMT Technology
Journal article, 2024
HEMTs
Power generation
Amplifier
frequency multiplier
Phase noise
doubler
voltage-controlled oscillator (VCO)
high power
Logic gates
HEMT
GaN
Voltage-controlled oscillators
<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$W$</tex-math> </inline-formula>-band
quadrupler
Tuning
tripler
Resonant frequency
Author
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thi Ngoc Do Thanh
Ericsson
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Frida Strömbeck
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. In PressSubject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TMTT.2024.3397035