Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs
Artikel i vetenskaplig tidskrift, 2011

The growth, fabrication, and performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an Ohmic recess etch yield HEMTs exhibiting 0.72 S/mm peak extrinsic DC transconductance at a current density of 0.47 A/mm. Devices with a gate length of 90 nm achieve 78 GHz unity-current-gain frequency and up to 166 GHz maximum frequency of oscillation. The minimum noise figure at 10 GHz is 0.52 dB with an associated gain of 9.5 dB.

recessed ohmic contacts

microwave noise

surface passivation

aluminum gallium nitride

high-electron mobility transistors (HEMTs)

Författare

Jonathan Felbinger

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Olle Axelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Xiang Gao

IQE RF LLC

Shiping Guo

IQE RF LLC

William Schaff

Cornell University

Lester Eastman

Cornell University

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 32 889-891 5872002

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/LED.2011.2143384