Resistive HEMT-mixer with very low LO-power requirements and low intermodulation
Paper i proceeding, 1991
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental -1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.