Resistive HEMT-mixer with very low LO-power requirements and low intermodulation
Paper in proceedings, 1991

The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental -1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.

Author

Herbert Zirath

Department of Microwave Technology

Niklas Rorsman

Department of Microwave Technology

European Microwave Conference

Vol. 2 1469-1474

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

094682147X

More information

Created

10/7/2017