Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs
Artikel i vetenskaplig tidskrift, 2007

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = −4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = −4 V and Vds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

Författare

Jui-Chien Huang

Vincent Desmaris

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Chia-Ta chang

Chung-Yu Lu

Kazuhide Kumakura

Toshiki Makimoto

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Edward-Yi Chang

IEEE Electron Device Letters

Vol. 28 6 476-478

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