Resistive SiC-MESFET mixer
Artikel i vetenskaplig tidskrift, 2002

A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.

Electric resistance

Frequency converters

Frequency modulation

MESFET devices

Energy gap

Silicon carbide

Bandpass filters

Computer simulation

Electric conductivity

Mixer circuits

Författare

Kristoffer Andersson

Institutionen för mikroelektronik

Joakim Eriksson

Institutionen för mikroelektronik

Niklas Rorsman

Institutionen för mikroelektronik

Herbert Zirath

Institutionen för mikroelektronik

IEEE Microwave and Wireless Components Letters

Vol. 12 119-121

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/7260.993287