Resistive SiC-MESFET mixer
Artikel i vetenskaplig tidskrift, 2002
A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
Electric resistance
Frequency converters
Frequency modulation
MESFET devices
Energy gap
Silicon carbide
Bandpass filters
Computer simulation
Electric conductivity
Mixer circuits
Författare
Kristoffer Andersson
Institutionen för mikroelektronik
Joakim Eriksson
Institutionen för mikroelektronik
Niklas Rorsman
Institutionen för mikroelektronik
Herbert Zirath
Institutionen för mikroelektronik
IEEE Microwave and Wireless Components Letters
Vol. 12 4 119-121
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/7260.993287