High gain graphene field effect transistors for wideband amplifiers
Paper i proceeding, 2014

We demonstrate graphene field of transistors (G-FETs) providing power gain of > 7 dB in a 50 O system. The G-FETs have S 21 > 0 dB up to 7 GHz. The result indicates the feasibility for G-FET based wideband amplifiers.

wideband amplifiers

Graphene FET

power gain

hydrogen intercalated graphene

Författare

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014

371-373

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/EuMC.2014.6986447

ISBN

978-287487035-4

Mer information

Skapat

2017-10-07