Comparison of the DC and microwave performance of AlGaN/GaN HEMTs with sputter PVD or plasma enhanced CVD grown silicon nitride (SiNx) passivation layer
Paper i proceeding, 2006

Sputter and plasma enhanced chemical vapor deposition (PECVD) processed SiNx passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs) was compared in this investigation. The both samples were process on the same wafer and the same process besides the passivation process in the same batch. From the data of DC, mimicked class B quiescent bias point pulse measurement, transient pulse measurement are showing that the sputter passivation HEMTs have better performance because there are fewer surface traps. The power sweep data from load pull measurement were in accordance with the pulsed measurement data. Without cooling, continuous wave power densities of 4W/mm and 3.1W/mm was measured at 3GHz on the sputter and PECVD passivation HEMTs, respectively.

Transient analysis

passvation

AlGaN/GaN HEMTs

Författare

Jin-Yu Shiu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vincent Desmaris

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Edward-Yi Chang

WOCSDICE 2006 Proceedings, Fiskebäckskil 2006

Ämneskategorier

Annan elektroteknik och elektronik