A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
Artikel i vetenskaplig tidskrift, 2011

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

diodes

SiC

power amplifiers (PAs)

varactors

self-aligned

diodes

Schottky

load modulation

silicon-carbide

tuning range

Interdigitated

Författare

Christer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niclas Ejebjörk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anne Henry

Linköpings universitet

S. Andersson

Linköpings universitet

E. Janzen

Linköpings universitet

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 32 788-790 5749687

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/led.2011.2131117