A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
Artikel i vetenskaplig tidskrift, 2011
SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
diodes
SiC
power amplifiers (PAs)
varactors
self-aligned
diodes
Schottky
load modulation
silicon-carbide
tuning range
Interdigitated
Författare
Christer Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niclas Ejebjörk
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Anne Henry
Linköpings universitet
S. Andersson
Linköpings universitet
E. Janzen
Linköpings universitet
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 32 6 788-790 5749687Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/led.2011.2131117