A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
Journal article, 2011

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

diodes

SiC

power amplifiers (PAs)

varactors

self-aligned

diodes

Schottky

load modulation

silicon-carbide

tuning range

Interdigitated

Author

Christer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niclas Ejebjörk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anne Henry

Linköping University

S. Andersson

Linköping University

E. Janzen

Linköping University

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 32 6 788-790 5749687

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/led.2011.2131117

More information

Latest update

2/28/2018