A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
Journal article, 2011
SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
diodes
SiC
power amplifiers (PAs)
varactors
self-aligned
diodes
Schottky
load modulation
silicon-carbide
tuning range
Interdigitated
Author
Christer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niclas Ejebjörk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Anne Henry
Linköping University
S. Andersson
Linköping University
E. Janzen
Linköping University
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 32 6 788-790 5749687Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/led.2011.2131117