Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC
Paper i proceeding, 2019
We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.
MIS capacitors
AlN/4H-SiC interface
Interface traps
Författare
Rabia Y. Khosa
Háskóli Íslands
J. T. Chen
Linköpings universitet
K. Pálsson
Háskóli Íslands
Robin Karhu
Linköpings universitet
J. Hassan
Linköpings universitet
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Einar Sveinbjӧrnsson
Háskóli Íslands
Linköpings universitet
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 963 MSF 460-464978-303571332-9 (ISBN)
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Birmingham, United Kingdom,
Birmingham, United Kingdom,
Ämneskategorier
Materialkemi
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.4028/www.scientific.net/MSF.963.460