Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC
Paper i proceeding, 2019

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

MIS capacitors

AlN/4H-SiC interface

Interface traps


Rabia Y. Khosa

Háskóli Íslands

J. T. Chen

Linköpings universitet

K. Pálsson

Háskóli Íslands

Robin Karhu

Linköpings universitet

J. Hassan

Linköpings universitet

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Einar Sveinbjӧrnsson

Háskóli Íslands

Linköpings universitet

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 963 MSF 460-464
978-303571332-9 (ISBN)

12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Birmingham, United Kingdom,



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