Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC
Paper in proceedings, 2019

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

MIS capacitors

AlN/4H-SiC interface

Interface traps

Author

Rabia Y. Khosa

University of Iceland

J. T. Chen

Linköping University

K. Pálsson

University of Iceland

Robin Karhu

Linköping University

J. Hassan

Linköping University

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Einar Sveinbjӧrnsson

University of Iceland

Linköping University

Materials Science Forum

0255-5476 (ISSN)

Vol. 963 MSF 460-464

12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Birmingham, United Kingdom,

Subject Categories

Materials Chemistry

Other Materials Engineering

Condensed Matter Physics

DOI

10.4028/www.scientific.net/MSF.963.460

More information

Latest update

11/18/2019