Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC
Paper in proceeding, 2019
We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.
MIS capacitors
AlN/4H-SiC interface
Interface traps
Author
Rabia Y. Khosa
University of Iceland
J. T. Chen
Linköping University
K. Pálsson
University of Iceland
Robin Karhu
Linköping University
J. Hassan
Linköping University
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjӧrnsson
University of Iceland
Linköping University
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 963 MSF 460-464978-303571332-9 (ISBN)
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Birmingham, United Kingdom,
Birmingham, United Kingdom,
Subject Categories
Materials Chemistry
Other Materials Engineering
Condensed Matter Physics
DOI
10.4028/www.scientific.net/MSF.963.460