Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation
Artikel i vetenskaplig tidskrift, 2015

A new methodology for the design of single/multi-band power amplifiers (PAs) with dynamic load modulation (DLM) is presented. First, the topology for the output matching network (OMN) including the control varactor is selected. A comprehensive optimization of the OMN parameters is then developed by which varactor and transistor losses are considered to ensure maximum efficiency enhancement at each frequency. To verify the method, a dual-band PA with DLM is realized. Drain efficiencies of 75% and 60% at 685 MHz and 1.84 GHz, respectively, are measured at peak output power. At 10-dB output power back-off efficiencies of 43.5% and 49.5%, respectively, are obtained. Linearized modulated measurements with a 6.5-dB peak-to-average power ratio WCDMA signal show average drain efficiencies of 56% and 54% at 685 MHz and 1.84 GHz, respectively, at an adjacent channel leakage ratio of -49 and -47.5 dBc, respectively. The proposed method shows the effectiveness of applying an optimization process for the design of single-or multi-band DLM PAs. The results demonstrate that near-optimum performance may be obtained in terms of efficiency enhancement for a given transistor and varactor-based OMN, thus making DLM competitive against other load modulation techniques.

tunable matching network

dynamic load modulation (DLM)

Dual band

high efficiency

gallium-nitride (GaN)

varactor

power amplifier (PA)

silicon-carbide (SiC)

Författare

Cesar Sanchez Perez

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

MUSTAFA ÖZEN

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christer Andersson

Mitsubishi Electric Corporation

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 63 8 2579-2588

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2015.2442985

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Skapat

2017-10-07