Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs
Artikel i övriga tidskrifter, 2012

The effect of large-aspect-ratio surface roughness of AlGaN/GaN wafers is investigated. The roughness has a surface morphology consisting of hexagonal peaks with maximum peak-to-valley height of more than 100 nm and lateral peak-to-peak distance between 25 and 100 mu m. Two epitaxial wafers grown at the same time on SiC substrates having different surface orientation and with a resulting difference in AlGaN surface roughness are investigated. Almost no difference is seen in the electrical characteristics of the materials, and the electrical uniformity of the rough material is comparable to that of the smoother material. The reliability of heterostructure field-effect transistors from both materials have been tested by stressing devices for up to 100 h without any significant degradation. No critical effect, from the surface roughness, on device fabrication is experienced, with the exception that the roughness will directly interfere with step-height measurements.

sapphire

surface roughness

transistors

surface orientation (SO)

heterostructures

misorientation

Heterostructures

Författare

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I. Booker

Linköpings universitet

P. Bergman

Linköpings universitet

E. Janzen

Linköpings universitet

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Device and Materials Reliability

1530-4388 (ISSN)

Vol. 12 3 538-546

Ämneskategorier

Fysik

DOI

10.1109/tdmr.2012.2188403

Mer information

Senast uppdaterat

2018-02-28